TQP7M9103-PCB900 TriQuint Semiconductor, TQP7M9103-PCB900 Datasheet

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TQP7M9103-PCB900

Manufacturer Part Number
TQP7M9103-PCB900
Description
Amplifier IC Development Tools 920-960MHZ 5VOLT EVAL BOARD
Manufacturer
TriQuint Semiconductor
Datasheet

Specifications of TQP7M9103-PCB900

Rohs
yes
Product
Development Tools
Tool Is For Evaluation Of
TQP7M9103
Operating Supply Voltage
5 V
Description/function
920-960MHz EVB
Operating Supply Current
235 mA
Part # Aliases
1080766
TQP7M9103
Advanced Data Sheet: Rev B 8/23/11
© 2011 TriQuint Semiconductor, Inc.
1W High Linearity Amplifier
Product Features
The TQP7M9103 is a high linearity driver amplifier in
industry standard, RoHS compliant, SOT-89 surface
mount package. This InGaP/GaAs HBT delivers high
performance across a broad range of frequencies with +45
dBm OIP3 and +29.5 dBm P1dB while only consuming
235 mA quiescent current. All devices are 100% RF and
DC tested.
The TQP7M9103 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input
power levels that may occur in a system.
The TQP7M9103 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards and high
power amplifiers in current and next generation multi-
carrier 3G / 4G base stations.
Applications
General Description
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
400-4000 MHz
+29.5 dBm P1dB
+45 dBm Output IP3
16.5 dB Gain @ 2140 MHz
+5V Single Supply, 235 mA Current
Internal RF overdrive protection
Internal DC overvoltage protection
On chip ESD protection
Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz,
29.5 dBm CW Pout or 20 dBm WCDMA Pout
SOT-89 Package
- 1 of 10 -
Pin #
Standard T/R size = 1000 pieces on a 7” reel.
Pin Configuration
Functional Block Diagram
Ordering Information
1
3
2, 4
Part No.
TQP7M9103
TQP7M9103-PCB900
TQP7M9103-PCB2140
Connecting the Digital World to the Global Network
Disclaimer: Subject to change without notice
3-pin SOT-89 Package
RF IN
1
1 W High Linearity Amplifier
TQP7M9103 920-960MHz EVB
TQP7M9103 2.11-2.17GHz EVB
Description
Symbol
GND
GND
RF Input
RF Output / Vcc
Ground
2
4
RF OUT
3
®

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TQP7M9103-PCB900 Summary of contents

Page 1

... RF Output / Vcc 2, 4 Ground Ordering Information Part No. Description TQP7M9103 1 W High Linearity Amplifier TQP7M9103-PCB900 TQP7M9103 920-960MHz EVB TQP7M9103-PCB2140 TQP7M9103 2.11-2.17GHz EVB Standard T/R size = 1000 pieces on a 7” reel. Disclaimer: Subject to change without notice - Connecting the Digital World to the Global Network ...

Page 2

... TQP7M9103 1W High Linearity Amplifier Specifications Absolute Maximum Ratings Parameter Storage Temperature Device Voltage Maximum Input Power, CW Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 Parameter Operational Frequency Range ...

Page 3

... TQP7M9103 1W High Linearity Amplifier Device Characterization Data Gain and Maximum Stable Gain 30 Gain (Max Gain (S21 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) Note: The gain for the unmatched device in 50 ohm system is shown as the trace in red color, [gain (S(21)]. For a tuned circuit for a particular frequency expected that actual gain will be higher the maximum stable gain. The maximum stable gain is shown in the black [Gain (MAX)]. The impedance plots are shown from 0.01 – ...

Page 4

... TQP7M9103 1W High Linearity Amplifier Application Circuit 920-960 MHz (TQP7M9103-PCB900) Notes: 1. See PC Board Layout, page 8 for more information. 2. Components shown on the silkscreen but not on the schematic are not used resistor (B1) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. ...

Page 5

... TQP7M9103 1W High Linearity Amplifier Typical Performance 920-960 MHz Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+19 dBm/tone, ∆ MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq Notes: ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10 0.01% Prob. ...

Page 6

... TQP7M9103 1W High Linearity Amplifier Application Circuit 2110-2170 MHz (TQP7M9103-PCB2140) Notes: 1. See PC Board Layout, page 8 for more information. 2. Components shown on the silkscreen but not on the schematic are not used resistors (Z7,B1) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. ...

Page 7

... TQP7M9103 1W High Linearity Amplifier Typical Performance 2110-2170 MHz Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+15 dBm/tone, ∆ MHz) WCDMA Channel power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq Notes: ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10 0.01% Prob. ...

Page 8

... TQP7M9103 1W High Linearity Amplifier Pin Configuration and Description Pin Symbol GND 3 RFout / Vcc Applications Information PC Board Layout PCB Material (stackup): 1 oz. Cu top layer 0.014 inch Nelco N-4000-13, ε =3 oz. Cu MIDDLE layer 1 Core Nelco N-4000-13 1 oz. Cu middle layer 2 0.014 inch Nelco N-4000-13 1 oz. Cu bottom layer Finished board thickness is 0.062± ...

Page 9

... TQP7M9103 1W High Linearity Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/RoHS- compliant. The plating material on the leads is NiPdAu compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. The component will be marked with a “ ...

Page 10

... TQP7M9103 1W High Linearity Amplifier Product Compliance Information ESD Information ESD Rating: Class 2 Value: ≥ 2000 V and < 4000 V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: ≥ 2000 V min Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating Level 3 at +260 ° ...

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