VS-10TTS08STRLPBF Vishay Semiconductors, VS-10TTS08STRLPBF Datasheet - Page 3

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VS-10TTS08STRLPBF

Manufacturer Part Number
VS-10TTS08STRLPBF
Description
SCRs 800 Volt 140 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-10TTS08STRLPBF

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
140 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.05 mA
Forward Voltage Drop
1.15 V
Gate Trigger Voltage (vgt)
1 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
30 mA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
800

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VS-10TTS08STRLPBF
Quantity:
70 000
Note
(1)
Document Number: 94562
Revision: 08-Jun-10
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Soldering temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
Marking device
When mounted on 1" square (650 mm
For recommended footprint and soldering techniques refer to application note #AN-994
125
120
115
110
105
125
120
115
110
105
0
0
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Average On-state Current (A)
1
Average On-state Current (A)
2
30°
10TTS08
R
2
60°
thJC
4
30°
90°
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
3
(DC) = 1.5 K/W
10TTS08
R
For technical questions within your region, please contact one of the following:
120°
6
thJC
60°
Conduction Period
Conduction Angle
180°
4
(DC) = 1.5 K/W
90°
8
5
2
DC
120°
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
10
6
180°
12
7
SYMBOL
Phase Control SCR, 10 A
T
R
R
J
thJA
, T
T
thJC
Surface Mountable
S
Stg
(1)
VS-10TTS08SPbF High Voltage Series
For 10 s (1.6 mm from case)
DC operation
Case style D
2
TEST CONDITIONS
PAK (SMD-220)
DiodesEurope@vishay.com
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
12
10
8
7
6
5
4
3
2
1
0
8
6
4
2
0
0
0
RMS Limit
180°
120°
RMS Limit
Average On-state Current (A)
1
DC
Average On-state Current (A)
90°
60°
30°
2
180°
120°
90°
60°
30°
2
Vishay Semiconductors
4
3
6
Conduction Period
4
Conduction Angle
10TTS08
T = 125°C
J
10TTS08
T = 125°C
8
J
5
- 40 to 125
VALUES
0.07
10
240
1.5
40
2
6
10TTS08S
www.vishay.com
12
7
UNITS
°C/W
oz.
°C
g
3

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