AT28C010E-12JU Atmel, AT28C010E-12JU Datasheet - Page 3
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AT28C010E-12JU
Manufacturer Part Number
AT28C010E-12JU
Description
IC EEPROM 1MBIT 120NS 32PLCC
Manufacturer
Atmel
Specifications of AT28C010E-12JU
Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-PLCC
Package
32PLCC
Interface Type
Parallel
Density
1 Mb
Maximum Random Access Time
120 ns
Typical Operating Supply Voltage
5 V
Organization
128Kx8
Data Retention
10 Year
Access Time
120 ns
Output Enable Access Time
50 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
40 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT28C010E-12JU
Manufacturer:
Atmel
Quantity:
135
Company:
Part Number:
AT28C010E-12JU
Manufacturer:
ATMEL
Quantity:
831
Part Number:
AT28C010E-12JU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
3. Block Diagram
4. Device Operation
4.1
4.2
4.3
4.4
0353G–PEEPR–10/06
Read
Byte Write
Page Write
DATA Polling
The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs.
The outputs are put in the high impedance state when either CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention in their system.
A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a
write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last.
The data is latched by the first rising edge of CE or WE. Once a byte write has been started it
will automatically time itself to completion. Once a programming operation has been initiated
and for the duration of t
The page write operation of the AT28C010 allows 1 to 128 bytes of data to be written into the
device during a single internal programming period. A page write operation is initiated in the
same manner as a byte write; the first byte written can then be followed by 1 to 127 additional
bytes. Each successive byte must be written within 150 µs (t
t
programming operation. All bytes during a page write operation must reside on the same page
as defined by the state of the A7 - A16 inputs. For each WE high to low transition during the
page write operation, A7 - A16 must be the same.
The A0 to A6 inputs are used to specify which bytes within the page are to be written. The
bytes may be loaded in any order and may be altered within the same load period. Only bytes
which are specified for writing will be written; unnecessary cycling of other bytes within the
page does not occur.
The AT28C010 features DATA Polling to indicate the end of a write cycle. During a byte or
page write cycle an attempted read of the last byte written will result in the complement of the
written data to be presented on I/O
valid on all outputs, and the next write cycle may begin. DATA Polling may begin at anytime
during the write cycle.
BLC
limit is exceeded the AT28C010 will cease accepting data and commence the internal
WC
, a read operation will effectively be a polling operation.
7
. Once the write cycle has been completed, true data is
BLC
) of the previous byte. If the
AT28C010
3