SI4836DY-E3 Vishay/Siliconix, SI4836DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4836DY-E3
• Description: MOSFET 12V 13A 1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4836DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 115 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 41 ns
• Factory Pack Quantity: 100
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 190 ns

Si4836DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71692.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
10
- 4
- 4
0.05
0.05
0.02
- 25
0.1
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0
Single Pulse
Threshold Voltage
T
J
10
25
- Temperature (°C)
- 3
50
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
I
D
75
Normalized Thermal Transient Impedance, Junction-to-Foot
= 250 µA
10
100
- 2
125
Square Wave Pulse Duration (s)
10
150
Square Wave Pulse Duration (s)
- 2
10
- 1
10
1
60
50
40
30
20
10
- 1
0
10
- 2
10
- 1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
- T
1
t
1
1
A
= P
S09-0221-Rev. E, 09-Feb-09
Time (s)
t
2
DM
Document Number: 71692
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 67 °C/W
100
10
600
600