SI4836DY-E3 Vishay/Siliconix, SI4836DY-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4836DY-E3
• Description: MOSFET 12V 13A 1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4836DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 115 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 41 ns
• Factory Pack Quantity: 100
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 190 ns

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08