BSH108 T/R NXP Semiconductors, BSH108 T/R Datasheet
BSH108 T/R
Manufacturer Part Number
BSH108 T/R
Description
MOSFET TAPE7 PWR-MO
Manufacturer
NXP Semiconductors
Datasheet
1.BSH108_TR.pdf
(13 pages)
Specifications of BSH108 T/R
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Fall Time
8 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
830 mW
Rise Time
8 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
15 ns
Part # Aliases
BSH108,215
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
c
M3D088
c
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
BSH108 in SOT23.
BSH108
N-channel enhancement mode field-effect transistor
Rev. 02 — 25 October 2000
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
Battery management
High speed switch
Low power DC to DC converter.
1
technology.
Simplified outline
Top view
1
SOT23
3
MSB003
2
Symbol
MBB076
Product specification
g
d
s
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