SI4486EY-E3 Vishay/Siliconix, SI4486EY-E3 Datasheet

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SI4486EY-E3

Manufacturer Part Number
SI4486EY-E3
Description
MOSFET 100V 7.9A 3.8W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4486EY-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.9 A
Resistance Drain-source Rds (on)
25 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
3.8 W
Rise Time
10 ns
Typical Turn-off Delay Time
46 ns
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71234
S09-1341-Rev. E, 13-Jul-09
Ordering Information: Si4486EY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
100
(V)
G
S
S
S
1
2
3
4
Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.028 at V
0.025 at V
Top View
R
SO-8
DS(on)
J
a
= 175 °C)
GS
GS
a
(Ω)
= 6.0 V
= 10 V
N-Channel 100-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
7.9
7.5
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 175 °C Maximum Junction Temperature
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
DM
I
AR
I
thJA
thJF
GS
DS
AR
D
S
D
stg
®
Power MOSFETs
Typical
10 s
7.9
6.1
3.1
3.8
2.3
33
70
17
G
N-Channel MOSFET
- 55 to 175
± 20
100
40
30
45
Steady State
D
S
Maximum
5.4
4.2
1.5
1.8
1.1
40
85
21
Vishay Siliconix
Si4486EY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI4486EY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4486EY-T1-E3 (Lead (Pb)-free) Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle ≤ ...

Page 2

... Si4486EY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71234 S09-1341-Rev. E, 13-Jul- °C J 0.8 1.0 1.2 Si4486EY Vishay Siliconix 3500 3000 C iss 2500 2000 1500 1000 C rss 500 C oss Drain-to-Source Voltage (V) DS Capacitance 2 ...

Page 4

... Si4486EY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 175 100 Limited DS(on 0 °C 0.01 A Single Pulse 0.001 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71234. Document Number: 71234 S09-1341-Rev. E, 13-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4486EY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 7

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 8

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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