SI4486EY-E3 Vishay/Siliconix, SI4486EY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4486EY-E3
• Description: MOSFET 100V 7.9A 3.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI4486EY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.9 A
• Resistance Drain-source Rds (on): 25 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.8 W
• Rise Time: 10 ns
• Typical Turn-off Delay Time: 46 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71234
S09-1341-Rev. E, 13-Jul-09
0.04
0.03
0.02
0.01
0.00
10
40
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 7.9 A
0.2
On-Resistance vs. Drain Current
= 50 V
6
8
V
SD
T
Q
J
g
- Source-to-Drain Voltage (V)
= 175 °C
0.4
12
- Total Gate Charge (nC)
I
D
- Drain Current (A)
Gate Charge
16
0.6
18
V
GS
24
= 6.0 V
24
0.8
T
J
= 25 °C
V
32
GS
30
1.0
= 10 V
40
36
1.2
3500
3000
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
500
2.6
2.3
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50 - 25
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
GS
= 7.9 A
10
= 10 V
2
V
V
C
0
DS
GS
rss
T
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
20
25
Capacitance
C
4
C
iss
50
oss
30
Vishay Siliconix
75
I
D
= 7.9 A
6
100
Si4486EY
40
www.vishay.com
125
8
50
150
175
10
60
3