SUB70N03-09P-E3 Vishay/Siliconix, SUB70N03-09P-E3 Datasheet
SUB70N03-09P-E3
Specifications of SUB70N03-09P-E3
Related parts for SUB70N03-09P-E3
SUB70N03-09P-E3 Summary of contents
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... 0 stg Symbol d PCB Mount (TO-263 thJA thJA Free Air (TO-220AB) R thJC SUP/SUB70N03-09P Vishay Siliconix N-Channel MOSFET Limit Unit 180 45 101 –55 to 175 C Limit ...
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... SUP/SUB70N03-09P Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Drain-Source On-State Resistance r DS(on) DS(on) a Forward Transconductance ...
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... T = – 0.025 0.020 25 C 125 C 0.015 0.010 0.005 SUP/SUB70N03-09P Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUP/SUB70N03-09P Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0 –50 – 100 T – Junction Temperature ( C) J Maximum Drain Current vs. Case Temperature 100 125 T – Case Temperature ( C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...