SUB70N03-09BP-E3 Vishay/Siliconix, SUB70N03-09BP-E3 Datasheet
SUB70N03-09BP-E3
Specifications of SUB70N03-09BP-E3
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SUB70N03-09BP-E3 Summary of contents
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... 100_C 0 25_C stg Symbol c PCB Mount (TO-263) R thJA Free Air (TO-220AB) R thJC SUP/SUB70N03-09BP Vishay Siliconix N-Channel MOSFET Limit Unit 30 V " 200 –55 to 175 Limit Unit 40 62.5 _C/W 1 ...
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... SUP/SUB70N03-09BP Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...
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... V 150 4 V 100 0.025 T = –55_C C 0.020 25_C 0.015 125_C 0.010 0.005 0.000 80 100 120 24 30 SUP/SUB70N03-09BP Vishay Siliconix Transfer Characteristics T = –55_C C 25_C – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUP/SUB70N03-09BP Vishay Siliconix On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 –50 – – Junction Temperature (_C) J Drain-Source Voltage Breakdown vs. Junction Temperature 45 = 250 –50 – – Junction Temperature (_C) J www.vishay.com 4 New Product _ 100 100 125 ...
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... Document Number: 71229 S-20102—Rev. B, 11-Mar-02 New Product 1000 100 10 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 Square Wave Pulse Duration (sec) SUP/SUB70N03-09BP Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 0 – Drain-to-Source Voltage (V) ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...