BSP250 /T3 NXP Semiconductors, BSP250 /T3 Datasheet - Page 3

• Manufacturer Part Number: BSP250 /T3
• Description: MOSFET TAPE13 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSP250 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 20 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 1650 mW
• Rise Time: 20 ns
• Factory Pack Quantity: 4000
• Part # Aliases: BSP250,135

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Pulse width and duty cycle limited by maximum junction temperature.
2. Device mounted on an epoxy printed-circuit board, 40
1997 Jun 20
handbook, halfpage
V
V
I
I
P
T
T
Source-drain diode
I
I
SYMBOL
D
DM
S
SM
stg
j
DS
GSO
tot
P-channel enhancement mode
vertical D-MOS transistor
P tot
(W)
2.0
1.6
1.2
0.8
0.4
0
0
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source current (DC)
peak pulsed source current
Fig.2 Power derating curve.
50
100
PARAMETER
150
T amb ( C)
MLB885
200
3
40
open drain
T
note 1
T
T
T
note 1
s
s
amb
s
handbook, halfpage
= 100 C
Soldering point temperature T
(1) R
100 C
100 C
1.5 mm; mounting pad for drain lead minimum 6 cm
= 25 C; note 2
= 0.01.
CONDITIONS
(A)
10
10
I D
10
10
DSon
10
1
2
1
2
1
limitation.
P
t p
T
Fig.3 SOAR.
1
=
s
(1)
t p
T
t
= 100 C.
65
MIN.
DC
10
Product specification
5
1.65
+150
150
V DS (V)
3
1.5
30
20
12
6
MAX.
10 s
BSP250
1 ms
t p =
MLB835
10
V
V
A
A
W
W
A
A
2
C
C
UNIT
2
.