TN2106N3-P014-G Supertex, TN2106N3-P014-G Datasheet - Page 4

• Manufacturer Part Number: TN2106N3-P014-G
• Description: MOSFET 60V 2.5Ohm
• Manufacturer: Supertex

Specifications of TN2106N3-P014-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Resistance Drain-source Rds (on): 2.5 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.74 W
• Rise Time: 5 ns
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 6 ns

Typical Performance Curves
100
1.1
1.0
0.9
1.0
0.8
0.6
0.4
0.2
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
2
Transfer Characteristics
= 25V
10
0
Variation with Temperature
C
f = 1MHz
RSS
V
V
GS
4
DS
T j (
(volts)
50
20
(volts)
O
●
C)
1235 Bordeaux Drive, Sunnyvale, CA 94089
6
100
30
(cont.)
8
C
ISS
150
40
10
4
1.2
1.0
0.8
0.6
0.4
10
10
8
6
4
2
0
8
6
4
2
0
V
-50
GS(th)
0
0
●
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
and R
38 pF
0.5
0.2
V
GS
0
DS(ON )
Q
R
= 4.5V
G
I D (amperes)
DS(ON)
(nanocoulombs)
0.4
1.0
Variation with Temperature
T j (
50
@ 10V, 0.5A
V
O
V
GS(th)
C)
DS
1.5
●
0.6
V
= 10V
GS
www.supertex.com
@ 1mA
92 pF
V
DS
= 10V
100
2.0
= 20V
0.8
150
2.5
1.0
2.0
1.6
1.2
0.8
0.4
0
TN2106