PMF280UN T/R NXP Semiconductors, PMF280UN T/R Datasheet - Page 3

• Manufacturer Part Number: PMF280UN T/R
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of PMF280UN T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.02 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 560 mW
• Rise Time: 10 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 18.5 ns
• Part # Aliases: PMF280UN,115

Philips Semiconductors
9397 750 12768
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
I D
T
P
P der
10 -1
10 -2
(%)
sp
120
der
10
80
40
1
0
= 25 C; I
function of solder point temperature.
10 -1
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse; V
Limit R DSon = V DS / I D
100%
100
GS
= 4.5 V
150
T sp ( C)
1
03aa17
200
Rev. 01 — 27 February 2004
DC
Fig 2. Normalized continuous drain current as a
I
I der
(%)
120
der
80
40
N-channel TrenchMOS™ ultra low level FET
0
function of solder point temperature.
=
0
-------------------
I
D 25 C
10
I
D
50
100%
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100 s
t p = 10 s
1 ms
10 ms
100 ms
100
V DS (V)
PMF280UN
150
T sp ( C)
03an08
03aa25
10 2
200
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