BUK963R2-40B /T3 NXP Semiconductors, BUK963R2-40B /T3 Datasheet - Page 10

• Manufacturer Part Number: BUK963R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK963R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 222 A
• Resistance Drain-source Rds (on): 0.0028 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 192 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 268 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 257 ns
• Part # Aliases: BUK963R2-40B,118

NXP Semiconductors
8. Revision history
Table 7.
BUK963R2-40B
Product data sheet
Document ID
BUK963R2-40B v.5
Modifications:
BUK95_96_9E3R2_40B-04
(9397 750 12049)
Revision history
Release date
20110216
20031114
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK963R2-40B separated from data sheet BUK95_96_9E3R2_40B-04.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data
Rev. 5 — 16 February 2011
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK963R2-40B
Supersedes
BUK95_96_9E3R2_40B-04
BUK95_963R2_40B-03
© NXP B.V. 2011. All rights reserved.
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