PSMN030-150B /T3 NXP Semiconductors, PSMN030-150B /T3 Datasheet - Page 9

• Manufacturer Part Number: PSMN030-150B /T3
• Description: MOSFET TAPE13 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN030-150B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55.5 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 76 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 71 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 97 ns
• Part # Aliases: PSMN030-150B,118

NXP Semiconductors
8. Revision history
Table 7.
PSMN030-150B
Product data sheet
Document ID
PSMN030-150B v.2
Modifications:
PSMN030-150B v.1
Revision history
20101213
20001201
Release date
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
Data sheet status
Product data sheet
Product data sheet
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN030-150B
Supersedes
PSMN030-150B v.1
-
© NXP B.V. 2010. All rights reserved.
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