BF996S T/R NXP Semiconductors, BF996S T/R Datasheet - Page 3

• Manufacturer Part Number: BF996S T/R
• Description: MOSFET TAPE7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF996S T/R

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.03 A
• Configuration: Single Dual Gate
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143-4
• Fall Time: 110 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 200 mW
• Rise Time: 115 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 135 ns
• Part # Aliases: BF996S,215

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8  10  0.7 mm.
April 1991
handbook, halfpage
V
I
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
D(AV)
G1-S
G1-S
stg
j
DS
tot
N-channel dual-gate MOS-FET
th j-a
(mW)
P tot
200
100
0
0
drain-source voltage
drain current (DC)
average drain current
gate 1 source
gate 2 source
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
PARAMETER
PARAMETER
100
T amb (°C)
MGE792
200
up to T
in free air; note 1
amb
3
CONDITIONS
= 60 C; note 1
CONDITIONS






65

MIN.
VALUE
460
Product specification
20
30
30
10
10
200
+150
150
MAX.
BF996S
UNIT
K/W
V
mA
mA
mA
mA
mW
C
C
UNIT