BF996S T/R NXP Semiconductors, BF996S T/R Datasheet - Page 3

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BF996S T/R

Manufacturer Part Number
BF996S T/R
Description
MOSFET TAPE7 MOS-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF996S T/R

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.03 A
Configuration
Single Dual Gate
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-143-4
Fall Time
110 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
200 mW
Rise Time
115 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
135 ns
Part # Aliases
BF996S,215
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8  10  0.7 mm.
April 1991
handbook, halfpage
V
I
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
D(AV)
G1-S
G1-S
stg
j
DS
tot
N-channel dual-gate MOS-FET
th j-a
(mW)
P tot
200
100
0
0
drain-source voltage
drain current (DC)
average drain current
gate 1 source
gate 2 source
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
PARAMETER
PARAMETER
100
T amb (°C)
MGE792
200
up to T
in free air; note 1
amb
3
CONDITIONS
= 60 C; note 1
CONDITIONS
65
MIN.
VALUE
460
Product specification
20
30
30
10
10
200
+150
150
MAX.
BF996S
UNIT
K/W
V
mA
mA
mA
mA
mW
C
C
UNIT

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