LND150N3-P014-G Supertex, LND150N3-P014-G Datasheet - Page 6
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LND150N3-P014-G
Manufacturer Part Number
LND150N3-P014-G
Description
MOSFET 500V 1KOhm
Manufacturer
Supertex
Datasheet
1.LND150K1-G.pdf
(7 pages)
Specifications of LND150N3-P014-G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 mA
Resistance Drain-source Rds (on)
1 kOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Fall Time
450 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.74 W
Rise Time
450 ns
Factory Pack Quantity
2000
Typical Turn-off Delay Time
100 ns
3-Lead TO-92 Package Outline (N3)
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Dimensions
(inches)
Symbol
NOM
MAX
MIN
Seating
Plane
E1
1
.170
.210
Bottom View
Front View
A
-
1
e1
2
●
D
2
e
1235 Bordeaux Drive, Sunnyvale, CA 94089
.014
.022
3
b
-
†
†
b
3
L
E
.014
.022
c
-
†
†
.175
.205
6
D
-
Side View
.125
.165
E
●
-
c
Tel: 408-222-8888
A
.080
.105
E1
-
●
.095
.105
www.supertex.com
e
-
.045
.055
e1
-
LND150
.610*
.500
L
-