LND150N3 Supertex Inc, LND150N3 Datasheet
LND150N3
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LND150N3 Summary of contents
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... Order Number / Package I DSS (min) TO-92 TO-243AA* 1.0mA LND150N3 LND150N8 Advanced DMOS Technology The LND1 is a high voltage N-channel depletion mode (normally- on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND1 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, volt- age ramp generation and amplification ...
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Thermal Characteristics Package I (continuous)* D TO-92 30mA TO-243AA 30mA * I (continuous) is limited by max rated † Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P Electrical Characteristics Symbol Parameter BV Drain-to-Source ...
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Typical Performance Curves Output Characteristics 250 V (volts) DS Transconductance vs. Drain Current 400V (milliamps) D Maximum Rated Safe ...
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... T (°C) j Transfer Characteristics 400V (volts) GS Capacitance vs. Drain-to-Source Voltage (volts) DS ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 100 150 1.8 1.6 1.4 1.2 1.0 0 -10V GS C ISS C OSS C RSS vs SOURCE 1 ...