ALD1109EPAL Advanced Linear Devices, ALD1109EPAL Datasheet - Page 2

• Manufacturer Part Number: ALD1109EPAL
• Description: MOSFET Dual N-Ch Pair Array
• Manufacturer: Advanced Linear Devices

Specifications of ALD1109EPAL

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Resistance Drain-source Rds (on): 500 Ohms
• Mounting Style: Through Hole
• Package / Case: PDIP-8
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Power Dissipation: 500 mW
• Factory Pack Quantity: 50

ALD110800/ALD110800A/ALD110900/ALD110900A
ABSOLUTE MAXIMUM RATINGS
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V - = GND T A = 25
Drain-Source voltage, V DS
Gate-Source voltage, V GS
Power dissipation
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Notes:
Parameter
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
1
Consists of junction leakage currents
1
1
V GS(th)
V OS
TC VOS
TC VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
R DS (ON)
∆R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
Symbol
°
C unless otherwise specified
ALD110800A/ALD110900A
-0.01
Min
10
0.00
+1.6
12.0
-1.7
500
104
Typ
0.0
3.0
1.4
1.8
0.5
2.5
0.1
Advanced Linear Devices
68
10
10
10
60
1
5
5
5
0.01
400
200
Max
2
4
1
-0.02
ALD110800/ALD110900
Min
10
+1.6
0.00
12.0
-1.7
500
104
0.0
3.0
1.4
1.8
0.5
2.5
0.1
Typ
68
10
10
10
60
2
5
5
5
Max
0.02
400
200
10
4
1
-65°C to +150°C
V
mV
µV/°C
mV/°C
mA
mmho
%
µmho
Ω
KΩ
%
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
Unit
0°C to +70°C
500 mW
+260°C
I DS =1µA, V DS = 0.1V
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = +9.5V, V DS = +5V
V GS = +4.0V, V DS = +5V
V GS = +4.0V
V DS = +9.0V
V GS = +4.0V
V DS = +9.0V
V DS = +0.1V
V GS = +4.0V
V DS = +0.1V
V GS = +0.0V
V DS = +0.1V
V GS = +4.0V
I DS = 1.0µA
V - = V GS = -1.0V
V GS = -1.0V, V DS =+5V
V - = -5V
T A = 125°C
V DS = 0V V GS = +5V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
10.6V
10.6V
Test Conditions
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