ALD1109EPAL Advanced Linear Devices, ALD1109EPAL Datasheet - Page 7

• Manufacturer Part Number: ALD1109EPAL
• Description: MOSFET Dual N-Ch Pair Array
• Manufacturer: Advanced Linear Devices

Specifications of ALD1109EPAL

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Resistance Drain-source Rds (on): 500 Ohms
• Mounting Style: Through Hole
• Package / Case: PDIP-8
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Power Dissipation: 500 mW
• Factory Pack Quantity: 50

ALD110800/ALD110800A/ALD110900/ALD110900A
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
-2.5
2.5
-0.3
-5
-0.2
-0.4
-0.1
5
0
0.0
0.6
0.3
1.2
0.9
0.3
0.2
0.1
DRAIN - GATE DIODE CONNECTED VOLTAGE
0.2
0.6
0.5
0.3
0.0
0
10000
TEMPCO vs. DRAIN SOURCE ON CURRENT
1
TRANCONDUCTANCE vs. DRAIN-SOURCE
0
0.1
-55°C ≤ T
V
T
DS
A
V GS(TH) =-3.5V
NORMALIZED SUBTHRESHOLD
= 25°C
CHARACTERISTICS RELATIVE
DRAIN SOURCE ON CURRENT (µA)
GATE THRESHOLD VOLTAGE
1000
DRAIN -SOURCE ON CURRENT(mA)
= +10V
DRAIN-SOURCE CURRENT (nA)
2
DRAIN-SOURCE ON VOLTAGE (V)
55°C
A
V GS(TH) =-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
0.2
10
≤ +125°C
ON CURRENT
100
4
0.5
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
100
10
6
1.0
25°C
V
D
= 0.1V
1
1000
8
2.0
0.1
10
5.0
Advanced Linear Devices
0.0
1.6
1.2
0.8
0.4
4.0
3.0
2.0
1.0
-1.0
-2.0
-3.0
-4.0
-0.5
1.0
0.0
2.0
2.5
2.0
1.5
0.5
100000 10000
1.0
0.0
0
-50
-4
V GS(TH) = +0.2V
-25
SUBTHRESHOLD CHARACTERISTICS
V
V GS(TH) = 0.0V
V
TRANSFER CHARACTERISTICS
T
t
-2
-25
DS
A
= 0.0V
= 25°C
vs. AMBIENT TEMPERATURES
= +10V
THRESHOLD VOLTAGE vs.
DRAIN -SOURCE CURRENT (nA)
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
V GS(TH) = -0.4V
GATE-SOURCE VOLTAGE (V)
55°C
AMBIENT TEMPERATURE (
THRESHOLD VOLTAGES
0
0
1000
25
V
V
V
2
t
V GS(th) = -3.5V
25
GS(th)
DS
= 0.2V
V GS(th) = -0.4V
V GS(th) = 0.0V
V GS(th) = -1.3V
100
= +0.1V I
V GS(TH) = -3.5V
4
= 0.2V
50
V GS(TH) = +0.8V
25°C
10
D
V GS(TH) = -1.3V
6
75
75
V GS(TH) = +1.4V
V
= 1.0
GS(th)
V
V
O
V
t
C)
µA
I DS = +1µA
V DS = +0.1V
t
= 0.4V
1
t
8
= 1.4V
100
= 0.8V
= 0.4V
10
0.1
125
125
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