AT28C010-12DM/883 Atmel, AT28C010-12DM/883 Datasheet - Page 5

IC EEPROM 1MBIT 120NS 32CDIP

AT28C010-12DM/883

Manufacturer Part Number
AT28C010-12DM/883
Description
IC EEPROM 1MBIT 120NS 32CDIP
Manufacturer
Atmel
Datasheet

Specifications of AT28C010-12DM/883

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Package / Case
32-CDIP (0.600", 15.24mm) Window
Density
1Mb
Interface Type
Parallel
Organization
128Kx8
Access Time (max)
120ns
Write Protection
Yes
Data Retention
10Year
Operating Supply Voltage (typ)
5V
Package Type
CDIP
Operating Temp Range
-55C to 125C
Supply Current
80mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
32
Maximum Clock Frequency
5 MHz
Access Time
120 ns
Output Enable Access Time
50 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
80 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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DC Characteristics (Continued)
AC Read Characteristics
0010F–PEEPR–02/10
Symbol
V
V
V
V
Symbol
t
t
t
t
t
t
ACC
CE
OE
DF
OH
CEPH
IH
OL
OH1
OH2
(3, 4)
(1)
(2)
(5)
Parameter
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage CMOS
Parameter
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
Output Hold from OE, CE or
Address, whichever occurred first
CE Pulse High Time
AC Read Waveforms
Notes:
1. CE may be delayed up to t
2. OE may be delayed up to t
3. t
4. This parameter is characterized and is not 100% tested.
5. If CE is de-asserted, it must remain de-asserted for at least 50ns during read operations other-
t
wise incorrect data may be read.
OE
DF
is specified from OE or CE wichever occurs first (CL = 5 pF).
after an address change without impact in t
Condition
I
I
I
OL
OH
OH
= 2.1 mA
= -400 μA
= -100 μA; V
AT28C010-12
Min
50
0
0
0
Max
120
120
50
50
CC
(1)(2)(3)(4)
= 4.5V
CE
ACC
AT28C010-15
- t
Min
50
0
0
0
- t
OE
CE
after the falling edge of CE without impact on t
after the address transition without impact on t
Max
150
150
55
55
ACC
AT28C010-20
Min
50
0
0
0
.
Min
2.0
2.4
4,2
AT28C010 Military
Max
200
200
55
55
AT28C010-25
Min
50
0
0
0
Max
0.45
Max
250
250
55
55
CE
ACC
or by t
Units
.
Units
V
V
V
V
ns
ns
ns
ns
ns
ns
ACC
5
-

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