VS-ST230S04P0VPBF Vishay Semiconductors, VS-ST230S04P0VPBF Datasheet - Page 2
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VS-ST230S04P0VPBF
Manufacturer Part Number
VS-ST230S04P0VPBF
Description
SCRs 230 Amp 400 Volt 360 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-ST230S12P0V.pdf
(8 pages)
Specifications of VS-ST230S04P0VPBF
Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
5970 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.55 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-93
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
12
Revision: 05-Mar-12
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
2
2
t for fusing
t for fusing
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
SYMBOL
SYMBOL
V
V
I
dV/dt
I
T(RMS)
dI/dt
I
I
I
RRM
V
T(AV)
I
T(TO)1
T(TO)2
DRM
TSM
2
I
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
t
L
t
,
Gate drive 20 V, 20 , t
T
Gate current 1 A, dI
V
I
V
180° conduction, half sine wave
DC at 78 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
I
T
T
T
TM
pk
J
d
R
J
J
J
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t
= 720 A, T
= 300 A, T
J
J
J
2
maximum linear to 80 % rated V
maximum, anode voltage 80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
J
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= T
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
J
< I < x I
< I < x I
maximum, t
g
J
J
maximum, dI
J
/dt = 1 A/μs
maximum
maximum
= 25 °C
RRM
RRM
r
www.vishay.com/doc?91000
1 μs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
p
VS-ST230SPbF Series
RRM
), T
), T
= 10 ms sine pulse
F
/dt = 20 A/μs,
J
J
applied
Vishay Semiconductors
J
= T
= T
= T
DRM
J
J
J
maximum
maximum
DRM
maximum
DiodesEurope@vishay.com
p
= 500 μs
Document Number: 94399
1000 (300)
VALUES
VALUES
VALUES
1000
5700
5970
4800
5000
1630
0.92
0.98
0.88
0.81
1.55
500
230
360
163
148
115
105
600
100
1.0
30
85
UNITS
UNITS
UNITS
kA
kA
A/µs
V/µs
m
mA
mA
°C
µs
A
A
V
V
2
2
s
s