VS-50RIA10 Vishay Semiconductors, VS-50RIA10 Datasheet - Page 2

• Manufacturer Part Number: VS-50RIA10
• Description: SCRs 100 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-50RIA10

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 1490 A
• Rated Repetitive Off-state Voltage Vdrm: 100 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-65
• Factory Pack Quantity: 100

50RIA Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
50RIA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
For voltage pulses with t
2
2
t for fusing
t for fusing
VOLTAGE
p
CODE
 5 ms
100
120
10
20
40
60
80
SYMBOL
For technical questions, contact: [e-mail]
V
V
I
I
T(RMS)
I
T(TO)1
T(TO)2
V
T(AV)
OFF-STATE VOLTAGE
TSM
REPETITIVE PEAK AND
I
I
r
r
I
I
2
2
TM
t1
t2
H
L
V
t
t
DRM
/V
Medium Power Thyristors
RRM
180° sinusoidal conduction
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied,
T
(16.7 % x  x I
( x I
(16.7 % x  x I
( x I
I
T
initial I
Anode supply 6 V, resistive load
pk
1000
1200
J
J
(Stud Version), 50 A
100
200
400
600
800
V
= T
= 25 °C, anode supply 22 V, resistive load,
= 157 A, T
, MAXIMUM
T(AV)
T(AV)
J
T
maximum
= 2 A
< I < 20 x  x I
< I < 20 x  x I
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 25 °C
(1)
TEST CONDITIONS
< I <  x I
< I <  x I
RRM
RRM
V
T(AV)
T(AV)
RSM
), T
), T
, MAXIMUM NON-REPETITIVE
T(AV)
T(AV)
Sinusoidal half wave,
initial T
PEAK VOLTAGE
J
J
), T
), T
= T
= T
J
J
J
J
J
= T
= T
maximum
maximum
= T
1100
1300
150
300
500
700
900
V
J
J
J
maximum
maximum
maximum
(2)
VALUES
10.18
101.8
1430
1490
1200
1255
9.30
7.20
6.56
0.94
1.08
4.08
3.34
1.60
Document Number: 93711
200
400
50
94
80
AT T
I
DRM
Revision: 19-Sep-08
J
/I
RRM
= T
mA
J
15
MAXIMUM
MAXIMUM
UNITS
kA
kA
m
mA
°C
A
A
A
V
V
2
2
s
s