VS-50RIA10 Vishay Semiconductors, VS-50RIA10 Datasheet - Page 5

• Manufacturer Part Number: VS-50RIA10
• Description: SCRs 100 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-50RIA10

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 1490 A
• Rated Repetitive Off-state Voltage Vdrm: 100 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-65
• Factory Pack Quantity: 100

Document Number: 93711
Revision: 19-Sep-08
100
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
90
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
0
RMS Limit
10
180°
120°
RMS Limit
90°
60°
30°
DC
Average On-state Current (A)
180°
120°
10
Average On-state Current (A)
90°
60°
30°
20
30
20
40
Conduction Period
50RIA Series
T = 125°C
30
Conduction Angle
50RIA Series
T = 125°C
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60
40
1000
100
Fig. 7 - Forward Voltage Drop Characteristics
70
10
1
0.5
Medium Power Thyristors
50
80
Instantaneous On-state Voltage (V)
(Stud Version), 50 A
1
1.5
50RIA Series
2
T = 25°C
T = 125°C
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2.5
3
3.5
4
1300
1200
1100
1000
Fig. 5 - Maximum Non-Repetitive Surge Current
1500
1400
1300
1200
1100
1000
Fig. 6 - Maximum Non-Repetitive Surge Current
4.5
Number Of Equal Amplitude Half Cycle Current Pulses (N)
900
800
700
600
900
800
700
600
500
0.01
1
50RIA Series
50RIA Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
Rated V
At Any Rated Load Condition And With
Versus Pulse Train Duration. Control
Vishay Semiconductors
Pulse Train Duration (s)
RRM
Applied Following Surge.
Rated V
0.1
10
No Voltage Reapplied
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
50RIA Series
Initial T = 125°C
Initial T = 125°C
RRM
Reapplied
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1
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