VS-ST333C08CFL0 Vishay Semiconductors, VS-ST333C08CFL0 Datasheet - Page 7
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VS-ST333C08CFL0
Manufacturer Part Number
VS-ST333C08CFL0
Description
SCRs 800 Volt 720 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-ST333C04LFM1.pdf
(10 pages)
Specifications of VS-ST333C08CFL0
Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
11500 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Forward Voltage Drop
1.96 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
TO-200AB
Factory Pack Quantity
12
Document Number: 93678
Revision: 15-May-08
1 E 4
1 E 3
1 E 2
1 E 1
1 E 1
tp
ST33 3C ..C Se ries
Sinuso idal pulse
1 E 2
P u lse B ase w id t h (µ s)
1 0 0
0 .1
0.2
1 0
0 .0 0 1
1
0 .3
a ) R e c o m m e n d e d lo a d lin e fo r
b ) Re c o m m e n d e d lo a d lin e f o r
0.5
Re c t a n g ula r g a t e p u lse
t r< =1 µ s
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s
1
2
For technical questions, contact: ind-modules@vishay.com
3
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
5
1 E 3
10
(Hockey PUK Version), 720 A
20 jo ule s pe r p ulse
Inverter Grade Thyristors
0 .0 1
V G D
IG D
Fig. 17 - Gate Characteristics
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
1 E 4
In sta n t a n e o u s G at e C u rr e n t (A )
1 E 4
0 .1
( b )
( a )
1
1 E 1
( 1 ) P G M = 1 0 W , t p = 2 0 m s
( 2 ) P G M = 2 0 W , t p = 1 0 m s
( 3 ) P G M = 4 0 W , t p = 5 m s
( 4 ) P G M = 6 0 W , t p = 3 .3 m s
t p
Vishay High Power Products
ST3 33 C Se ries
Rec tang ula r pulse
di/dt = 50A /µs
1 0
( 1 )
1 E 2
0.2
P u lse Ba se w id t h (µ s)
( 2 )
0.3
ST333C..C Series
(3 )
0.4
( 4 )
1 0 0
0 .5
1
2
3
1 E 3
5
10
2 0 jou les p er pulse
www.vishay.com
1 E 4
7