VS-ST303S12PFK0P Vishay Semiconductors, VS-ST303S12PFK0P Datasheet - Page 6

• Manufacturer Part Number: VS-ST303S12PFK0P
• Description: SCRs 300 Amp 1200 Volt 471 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST303S12PFK0P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 8320 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 2.16 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 6

ST303SPbF Series
Vishay High Power Products
www.vishay.com
6
1E4
1E3
1E2
1E1
1E0
1E4
1E3
1E2
1E1
1E1
1E1
Fig. 9 - Reverse Recovered Charge Characteristics
320
300
280
260
240
220
200
180
160
140
120
100
80
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
10 20 30 40 50 60 70 80 90 100
2500
2500
2000
2000
Pulse Basewidth (µs)
1E2
Puls e Basewidth (µs)
1E2
1500
1500
I
T M
1000
1000
= 500 A
300 A
200 A
100 A
50 A
500
500
S T 303S S eries
T = 125 °C
J
For technical questions, contact: [e-mail]
tp
400
400
1E3
1E3
200
200
S T 303S S eries
T rap ezoid al p ulse
T = 40°C
d i/ dt = 50A/ µs
C
S T 303S S eries
S inusoida l pulse
T = 40°C
S nub ber c ircuit
R = 10 ohms
C = 0.47 µF
V = 80% V
C
S nubb er circ uit
R = 10 ohms
C
V = 80% V
s
s
D
s
s
D
100
100
Inverter Grade Thyristors
= 0.47 µF
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
(Stud Version), 300 A
50 Hz
50 Hz
DRM
DRM
1E4
1E4
1E1
1E1
Fig. 10 - Reverse Recovery Current Characteristics
180
160
140
120
100
80
60
40
20
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
10 20 30 40 50 60 70 80 90 100
2000
Puls e Basewidth (µs)
1E2
Pulse Basewidth (µs)
I
1E2
1500
T M
1500
= 500 A
1000
300 A
100 A
200 A
50 A
1000
500
500
400
S T 303S S eries
T = 125 °C
J
Document Number: 94375
tp
400
1E3
200
1E3
Revision: 30-Apr-08
200
S T 303S S eries
S inusoidal pulse
T = 65°C
S T 303S S eries
T ra p ezoida l pulse
T = 65°C
di/ d t = 50A/µs
S nubber circuit
R = 10 ohms
C
V
C
C
100
S nub b er c ircuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
s
s
D
= 80% V
100
= 0.47 µF
50 Hz
50 Hz
DRM
DRM
1E4
1E4