TISP6NTP2C-R6-S Bourns, TISP6NTP2C-R6-S Datasheet - Page 2

• Manufacturer Part Number: TISP6NTP2C-R6-S
• Description: SCRs Circuit Protection TVS - Other Composition - SURGE PROTECTOR QUAD PROG 90A
• Manufacturer: Bourns

The systems described often have the need to source two POTS (Plain Old Telephone Service) lines, one for a telephone and the other for a
facsimile machine. In a single surface mount package, the TISP6NTP2C protects the two POTS line SLICs (Subscriber Line Interface Circuits)
against overvoltages caused by lightning, a.c. power contact and induction.
The TISP6NTP2C has an array of four buffered P-gate forward conducting thyristors with twin commoned gates and a common anode
connection. Each thyristor cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across each
thyristor. The buffer transistors reduce the gate supply current.
In use, the cathodes of an TISP6NTP2C thyristors are connected to the four conductors of two POTS lines (see applications information).
Each gate is connected to the appropriate negative voltage battery feed of the SLIC driving that line pair. By having separate gates, each SLIC
can be protected at a voltage level related to the negative supply voltage of that individual SLIC. The anode of the TISP6NTP2C is connected
to the SLIC common. The TISP6NTP2C voltage and current ratings also make it suitable for the protection of ISDN d.c. feeds of down to
-115 V (ETSI Technical Report ETR 080:1993, ranges 1 to 5).
Positive overvoltages are clipped to common by forward conduction of the TISP6NTP2C antiparallel diode. Negative overvoltages are initially
clipped close to the SLIC negative supply by emitter follower action of the TISP6NTP2C buffer transistor. If sufficient clipping current flows,
the TISP6NTP2C thyristor will regenerate and switch into a low voltage on-state condition. As the overvoltage subsides, the high holding
current of the TISP6NTP2C helps prevent d.c. latchup.
Repetitive peak off-state voltage, V
Repetitive peak gate-cathode voltage, V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state current, 50 Hz/60 Hz (see Notes 1 and 2)
Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Note 1)
Operating free-air temperature range
Junction temperature
Storage temperature range
NOTES: 1. Initially, the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions.
Description (Continued)
Absolute Maximum Ratings, 0
Recommended Operating Conditions
C
R
G
S
TISP6NTP2C High Voltage Ringing SLIC Protector
10/1000 (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
5/320 (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700)
2/10 (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
0.1 s
1 s
5 s
300 s
900 s
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathode-
Gate decoupling capacitor
Series resistor for GR-1089-CORE intra-building surge survival, section 4.5.9, tests 1 and 2
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
Gate voltage range is -20 V to -155 V.
anode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in
this case the anode terminal current will be four times the rated current value of an individual terminal pair).
GK
°
C
= 0
≤
KA
T J
= 0
Rating
≤
Component
70
°
C (Unless Otherwise Noted)
Customers should verify actual device performance in their specific applications.
Symbol
V
I
V
I
PPSM
I
GKRM
Specifications are subject to change without notice.
GSM
T
TSM
DRM
T
T
stg
A
J
100
Min
10
5
-40 to +150
-40 to +150
-40 to +85
220
Typ
MARCH 2002 – REVISED JULY 2008
Value
50
50
-170
-167
0.45
0.43
+25
2.7
1.5
25
40
90
7
Max
Unit
°C
°C
°C
V
V
A
A
A
Unit
nF
Ω
Ω