TISP6NTP2C-R6-S Bourns, TISP6NTP2C-R6-S Datasheet - Page 5

• Manufacturer Part Number: TISP6NTP2C-R6-S
• Description: SCRs Circuit Protection TVS - Other Composition - SURGE PROTECTOR QUAD PROG 90A
• Manufacturer: Bourns

The generation of POTS lines at the customer premise normally uses a ringing SLIC. Although the lines are short, a central office ringing
voltage level is often required for fax machine operation. High voltage SLICs are now available that can produce adequate ringing voltage (see
table). The TISP6NTP2C has been designed to work with these SLICs which use battery voltages, V
typical example with one TISP6NTP2C protecting two SLICs.
The table below shows some details of HV SLICs using multiple negative supply rails.
For voltage feed protection, the cathodes of an TISP6NTP2C thyristors are connected to the four conductors to be protected (see Figure 3).
Each gate is connected to the appropriate negative voltage feed. The anode of the TISP6NTP2C is connected to the system common.
Positive overvoltages are clipped to common by forward conduction of the TISP6NTP2C antiparallel diode. Negative overvoltages are initially
clipped close to the negative supply by emitter follower action of the TISP6NTP2C buffer transistor. If sufficient clipping current flows, the
TISP6NTP2C thyristor will regenerate and switch into a low voltage on-state condition. As the negative overvoltage subsides, the high holding
current of the TISP6NTP2C prevents d.c. latchup.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Figure 4 shows the protector electrodes. The package terminal designated gate, G, is the transistor base, B, electrode connection and so is
marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK (off state) and the antiparallel diode
(reverse blocking). This clause covers the necessary testing to ensure the junctions are good.
Testing transistor CB and EB: The maximum voltage stress level for the TISP6NTP2C is V
diode voltage overshoot, V
common (0 V) for this test (see Figure 4). The measured current, I
Testing transistor CB, SCR AK off state and diode reverse blocking: The highest AK voltage occurs during the overshoot period of the
protector. To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, I
can be applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is
shorted during this test (see Figure 5).
Summary: Two tests are need to verify the protector junctions. Maximum current values for I
voltage conditions.
MARCH 2002 – REVISED JULY 2008
† Assumes -20 V battery voltage during ringing.
‡ Legerity, the Legerity logo and ISLIC are the trademarks of Legerity, Inc.
Other product names used in this publication are for identification purposes only and may be trademarks of their respective
companies .
SLIC Protection
R or T Overshoot < 250 ns
ISDN Protection
Voltage Stress Levels
Line Feed Resistance
Short Circuit Current
Data Sheet Issue
AC Ringing for:
Manufacturer
SLIC Series
Crest Factor
V
V
TISP6NTP2C High Voltage Ringing SLIC Protector
BATH
BATL
SLIC #
V
V
BATH
BATR
max.
max.
FRM
. The current flowing out of the G terminal is measured at V
INFINEON‡
14/02/2001
SLIC-P‡
PEB 4266
20 + 30
-155
-150
-150
110
1.4
85
-70
APPLICATIONS INFORMATION
-15
ISLIC™‡
-/08/2000
79R241
-104
-104
150
45†
-90
-36
1.4
50
GKS
15
, is the sum of the junction currents I
LEGERITY™‡
-20
-/07/2000
79R101
V
-104
150
-99
-24
50†
1.4
BATH
50
12
BATH
BATH
GKS
plus V
with the addition of the short term antiparallel
and I
-20
BATH
FRM
D
-/07/2000
are required at the specified applied
79R100
. The SCR K terminal is shorted to the
, down to -150 V. Figure 2 shows a
V
-104
1.25
150
-99
CB
-24
55†
BATH
50
and I
12
EB
.
V rms
Unit
mA
V
V
V
Ω
V
V
D
,