ALD1109ESAL Advanced Linear Devices, ALD1109ESAL Datasheet

ALD1109ESAL

Manufacturer Part Number

ALD1109ESAL

Description

MOSFET Dual N-Ch Pair Array

Manufacturer

Advanced Linear Devices

Datasheet

1.ALD1109EPAL.pdf (11 pages)

Specifications of ALD1109ESAL

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

10 V

Gate-source Breakdown Voltage

10.6 V

Continuous Drain Current

12 mA

Resistance Drain-source Rds (on)

500 Ohms

Mounting Style

SMD/SMT

Package / Case

SOIC-8

Forward Transconductance Gfs (max / Min)

0.0014 S

Power Dissipation

500 mW

Factory Pack Quantity

Current page: 1 of 11
Download datasheet (103Kb)

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values.

GENERAL DESCRIPTION

ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision

monolithic quad/dual N-Channel MOSFETs matched at the factory using

ALD’s proven EPAD CMOS technology. These devices are members of

the EPAD

Intended for low voltage small signal applications, the ALD110800/

ALD110900 features Zero-Threshold

nates input to output voltage level shift, including circuits where the signal

is referenced to GND or V+. This feature greatly reduces output signal

voltage level shift and enhances signal operating range, especially for

very low operating voltage environments. With these zero threshold de-

vices, an analog circuit with multiple stages can be constructed to oper-

ate at extremely low supply or bias voltage levels. For example, an input

amplifier stage operating at 0.2V supply voltage has been demonstrated.

ALD110800A/ALD110800/ALD110900A/ALD110900 matched pair

MOSFETs are designed for exceptional device electrical characteristics

matching with the threshold voltage set precisely at +0.00V +0.01V, fea-

turing a typical offset voltage of only +0.001V (1mV). As these devices

are on the same monolithic chip, they also exhibit excellent tempco track-

ing characteristics. They are versatile as design components for a broad

range of analog applications such as basic building blocks for current

sources, differential amplifier input stages, transmission gates, and multi-

plexer applications.

Besides matched pair electrical characteristics, each individual MOSFET

also exhibits well controlled parameters, enabling the user to depend on

tight design limits. Even units from different batches and different date

of manufacture have correspondingly well matched characteristics.

These devices are built for minimum offset voltage and differential ther-

mal response, and they are designed for switching and amplifying appli-

cations in +0.2V to +10V systems where low input bias current, low input

capacitance, and fast switching speed are desired. The V

devices is set at +0.00V, which classifies them as both enhancement mode

and depletion mode devices. When the gate is set at 0.00V, the drain

current is +1µA @ V

voltage level biased at or near input voltage level without voltage level

shift. These devices exhibit well controlled turn-off and sub-threshold

characteristics of standard enhancement mode MOSFETs.

The ALD110800A/ALD110800/ALD110900A/ALD110900 are MOSFET

devices that feature high input impedance (10

gain (>10

of 3mA and input leakage current of 30pA at 25°C is 3mA/30pA =

100,000,000. For most applications, connect the V+ pin to the most posi-

tive voltage and the V- and IC pins to the most negative voltage in the

system. All other pins must have voltages within these voltage limits at all

times.

ALD110800ASCL

ALD110800SCL

16-Pin

SOIC

Package

0°C to +70°C

). A sample calculation of the DC current gain at a drain current

Matched Pair MOSFET Family.

INEAR

DVANCED

EVICES,

ALD110800APCL

ALD110800PCL

Operating Temperature Range*

16-Pin

Plastic Dip

Package

= 0.1V, which allows a class of circuits with output

NC.

QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD

(“L” suffix

PRECISION MATCHED PAIR MOSFET ARRAY

™

ALD110900SAL

ALD110900ASAL ALD110900APAL

denotes lead-free (RoHS))

SOIC

Package

voltage, which reduces or elimi-

8-Pin

0°C to +70°C

Ω) and high DC current

ALD110900PAL

8-Pin

Plastic Dip

Package

GS(th)

www.aldinc.com

ALD110800/ALD110800A/ALD110900/ALD110900A

of these

FEATURES

• Precision zero threshold voltage mode

• Nominal R

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• V

• Positive, zero, and negative V

• Low input capacitance

• Low input/output leakage currents

APPLICATIONS

• Energy harvesting circuits

• Very low voltage analog and digital circuits

• Zero power fail safe circuits

• Backup battery circuits & power failure detector

• Low level voltage clamp & zero crossing detector

• Source followers and buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Analog switches / multiplexers

• Voltage comparators and level shifters

PIN CONFIGURATIONS

GS(th)

IC*

*IC pins are internally connected, connect to V-

match (V

DS(ON)

SCL, PCL PACKAGES

V -

SAL, PAL PACKAGES

) to 2mV and 10mV max.

ALD110900

ALD110800

M 4

M 1

=0.00V of 104KΩ

M 3

M 2

GS(th)

V -

V GS(th) = +0.00V

V -

tempco

IC*

V -

EPAD

Related parts for ALD1109ESAL

ALD1109ESAL Summary of contents

Page 1

... Package Package ALD110800ASCL ALD110800APCL ALD110800SCL ALD110800PCL * Contact factory for industrial temp. range or user-specified threshold voltage values. Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 ALD110800/ALD110800A/ALD110900/ALD110900A ™ voltage, which reduces or elimi- of these GS(th) 12 Ω) and high DC current denotes lead-free (RoHS)) 0° ...

Page 2

... Advanced Linear Devices 10.6V 10.6V 500 mW 0°C to +70°C -65°C to +150°C +260°C Typ Max Unit Test Conditions 0. =1µ 0. µV/°C V DS1 = V DS2 -1.7 mV/° 1µ 0.1V 0 20µ ...

Page 3

... MOSFET as well. The Drain current in the linear region ( where: = 0.0V the EPAD GS In this region of operation the I and the device can be used as gate-voltage controlled resistor. For higher values of V tion current I Advanced Linear Devices ) is given by: GS(th GS(th Mobility C = Capacitance / unit area of Gate electrode ...

Page 4

... Zero Tempco (ZTC) point, even though that could require special circuit configuration and power consump- tion design consideration. Advanced Linear Devices GS bias voltage. This linear shift in V causes the subthresh ...

Page 5

... GS(TH) =+ GS(TH) =+ GS(TH) =+ GS(TH) =+ GS(TH) =+ GS(TH) = -3.5V V GS(TH) = +1.4V V GS(TH) = +0. GS(TH) =+0. Advanced Linear Devices DRAIN-SOURCE ON RESISTANCE vs. DRAIN-SOURCE ON CURRENT 2500 25°C 2000 1500 GS(TH) +4V 1000 500 GS(TH) +6V 0 100 1000 10 DRAIN-SOURCE ON CURRENT (µA) TRANSCONDUCTANCE vs. ...

Page 6

... GS(TH =+ =+1V V 1000 10000 + +1V V GS(TH GS(TH GS(TH GS(TH GS(TH GS(TH GS(TH) 75 100 125 Advanced Linear Devices DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 100 Zero Temperature Coefficient (ZTC) 125° 25° GS(TH) GS(TH) GS(TH) GS(TH) +0.0 +0.4 +0 ...

Page 7

... DRAIN -SOURCE ON CURRENT(mA) NORMALIZED SUBTHRESHOLD CHARACTERISTICS RELATIVE GATE THRESHOLD VOLTAGE 0.3 0.2 0.1 0 -0.1 -0.2 55°C -0.3 -0.4 10000 10 1000 100 DRAIN-SOURCE CURRENT (nA) ALD110800/ALD110800A/ALD110900/ALD110900A 1000 2.0 5 0.1V D 25°C 1 0.1 Advanced Linear Devices TRANSFER CHARACTERISTICS 1 25° GS(TH) = -3. +10V DS 1.2 V GS(TH) = -1.3V V GS(TH) = -0.4V V GS(TH) = 0.0V 0.8 V GS(TH) = +0.2V 0.4 V GS(TH) = +1.4V V GS(TH) = +0.8V 0 GATE-SOURCE VOLTAGE (V) SUBTHRESHOLD CHARACTERISTICS 2.5 2.0 1 ...

Page 8

... Pin Plastic SOIC Package E Dim Min 1. 0.35 b 0.18 C 9.80 D-16 3. 5. ø 0° 0. ø Advanced Linear Devices Millimeters Inches Max Min 1.75 0.053 0.25 0.004 0.45 0.014 0.25 0.007 10.00 0.385 4.05 0.140 1.27 BSC 0.050 BSC 6.30 0.224 0.937 0.024 8° 0° 0.50 0.010 Max 0.069 0.010 0.018 0.010 ...

Page 9

... ALD110800/ALD110800A/ALD110900/ALD110900A PDIP-16 PACKAGE DRAWING 16 Pin Plastic DIP Package Dim 18.93 D- S-16 ø Advanced Linear Devices Millimeters Min Max Min 3.81 5.08 0.105 0.38 1.27 0.015 2.03 0.050 1.27 1.65 0.035 0.89 0.38 0.51 0.015 0.20 0.30 0.008 21.33 0.745 7.11 0.220 5.59 7.62 8.26 0.300 2.29 2.79 0.090 7.37 7 ...

Page 10

... S (45° (45° ALD110800/ALD110800A/ALD110900/ALD110900A SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Dim D ø ø Advanced Linear Devices Millimeters Min Max Min 1.75 0.053 1.35 0.25 0.004 0.10 0.45 0.014 0.35 0.25 0.007 0.18 5.00 0.185 4.69 4.05 0.140 3.50 1.27 BSC 0.050 BSC 6.30 0.224 5.70 0.937 ...

Page 11

... Dim 3. 0. 0.20 c 9.40 D 2.79 S-8 1.02 ø Advanced Linear Devices Millimeters Inches Min Max Min 5.08 0.105 1.27 0.015 2.03 0.050 1.65 0.035 0.51 0.015 0.30 0.008 11.68 0.370 7.11 0.220 8.26 0.300 2.79 0.090 7.87 0.290 3.81 0.110 2.03 0.040 0° 15° 0° Max 0.200 0.050 0.080 ...

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