ALD1109ESAL Advanced Linear Devices, ALD1109ESAL Datasheet - Page 8

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ALD1109ESAL

Manufacturer Part Number
ALD1109ESAL
Description
MOSFET Dual N-Ch Pair Array
Manufacturer
Advanced Linear Devices
Datasheet

Specifications of ALD1109ESAL

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
10 V
Gate-source Breakdown Voltage
10.6 V
Continuous Drain Current
12 mA
Resistance Drain-source Rds (on)
500 Ohms
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Forward Transconductance Gfs (max / Min)
0.0014 S
Power Dissipation
500 mW
Factory Pack Quantity
50
ALD110800/ALD110800A/ALD110900/ALD110900A
S (45°)
e
S (45°)
D
L
H
b
A
SOIC-16 PACKAGE DRAWING
A
E
C
1
ø
16 Pin Plastic SOIC Package
Advanced Linear Devices
Dim
D-16
A
A
C
E
H
ø
S
b
e
L
1
1.35
0.10
0.35
0.18
9.80
3.50
5.70
0.60
0.25
Min
Millimeters
1.27 BSC
10.00
0.937
Max
1.75
0.25
0.45
0.25
4.05
6.30
0.50
0.053
0.004
0.014
0.007
0.385
0.140
0.224
0.024
0.010
Min
0.050 BSC
Inches
0.069
0.010
0.018
0.010
0.394
0.160
0.248
0.037
0.020
8 of 11
Max

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