DMP3028LFDE-13 Diodes Inc., DMP3028LFDE-13 Datasheet - Page 3

• Manufacturer Part Number: DMP3028LFDE-13
• Description: MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A
• Manufacturer: Diodes Inc.

Specifications of DMP3028LFDE-13

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 5.3 A
• Resistance Drain-source Rds (on): 60 mOhms
• Configuration: Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UDFN2020-6
• Fall Time: 40.4 ns
• Gate Charge Qg: 10.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.66 W
• Rise Time: 17.1 ns
• Typical Turn-off Delay Time: 60.5 ns

DMP3028LFDE
Document number: DS35965 Rev. 5 - 2
0.05
0.04
0.03
0.02
0.01
0.05
0.04
0.03
0.02
0.01
20
15
10
5
0
0
0
0
0
0
V
GS
2
Figure 1 Typical Output Characteristics
-V , DRAIN -SOURCE VOLTAGE (V)
V
GS
-I , DRAIN SOURCE CURRENT (A)
= -4.5V
DS
Figure 3 Typical On-Resistance vs.
V
5
-I , DRAIN SOURCE CURRENT (A)
D
V
Figure 5 Typical On-Resistance vs.
1
GS
= -3.5V
D
Drain Current and Gate Voltage
4
GS
V
Drain Current and Temperature
GS
= -4.0V
= -10V
V
GS
= -4.5V
6
10
= -5.0V
2
8
15
10
3
12
V
V
GS
GS
20
T = 150 C
T = 125 C
A
A
T = 85 C
14
V
= -10V
T = 25 C
T = -55 C
= -4.5V
A
GS
A
A
= -3.0V
V
16
4

GS




25
= -2.5V
18
5
30
20
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0.30
0.25
0.20
0.15
0.10
0.05
20
15
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
0
0
-50
0
0
Figure 6 On-Resistance Variation with Temperature
Figure 4 Typical Drain-Source On-Resistance
V
Figure 2 Typical Transfer Characteristics
DS
-25
-V
T , JUNCTION TEMPERATURE ( C)
= -5.0V
-V
GS
1
J
I = -7.0A
GS
D
I = -6.2A
T = 125 C
D
, GATE-SOURCE VOLTAGE (V)
A
0
5
, GATE-SOURCE VOLTAGE (V)
vs. Gate-Source Voltage
T = 150 C
A

25
2

10
50
T = -55 C
A
3
T = 25 C
T = 85 C
A
75
A
DMP3028LFDE



V
I = -10A
D
100
15
GS
4
= -10V
V
I = -5.0A
D

© Diodes Incorporated
GS
125
= -5.0V
March 2013
150
5
20