DMP3028LFDE-13 Diodes Inc., DMP3028LFDE-13 Datasheet - Page 4

• Manufacturer Part Number: DMP3028LFDE-13
• Description: MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A
• Manufacturer: Diodes Inc.

Specifications of DMP3028LFDE-13

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 5.3 A
• Resistance Drain-source Rds (on): 60 mOhms
• Configuration: Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UDFN2020-6
• Fall Time: 40.4 ns
• Gate Charge Qg: 10.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.66 W
• Rise Time: 17.1 ns
• Typical Turn-off Delay Time: 60.5 ns

DMP3028LFDE
Document number: DS35965 Rev. 5 - 2
0.05
0.04
0.03
0.02
0.01
20
15
10
5
0
0
-50
0
Figure 7 On-Resistance Variation with Temperature
Figure 9 Diode Forward Voltage vs. Current
-25
0.001
-V , SOURCE-DRAIN VOLTAGE (V)
0.2
0.01
T , JUNCTION TEMPERATURE ( C)
0.00001
0.1
SD
J
1
0
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
0.4
T = 85 C
A
25
T = 125 C
A
T = 150 C
A
0.0001

0.6
V
I =

D
50
GS

-5.0
= 5.0V
-
A
75
V
I =
D
0.8
GS
0.001
-10
= -10V
100
A
T = -55 C
A
T = 25 C
1.0

A
Figure 10 Transient Thermal Resistance
125

t1, PULSE DURATION TIMES (sec)

1.2
0.01
150
www.diodes.com
4 of 6
0.1
D = 0.9
Figure 8 Gate Threshold Variation vs. Ambient Temperature
3.0
2.0
1.0
2.5
1.5
0.5
0
-50
1
-25
T , AMBIENT TEMPERATURE (°C)
A
0
R
R
Duty Cycle, D = t1/ t2
10


JA
JA
25
-I = 250µA
(t) = r(t) * R
D
= 165°C/W
50
100
-I = 1mA
D
75

JA
DMP3028LFDE
100
1,000
125 150
© Diodes Incorporated
March 2013