This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
... JA Thermal Resistance, Junction-to-Case R JC Package Marking and Ordering Information Device Marking Device NDS9407 NDS9407 2002 Fairchild Semiconductor Corporation Features –3.0 A, –60 V. PowerTrench Low gate charge Fast switching speed High performance trench technology for extremely low R DS(ON) High power and current handling capability ...
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...