NDS9407_D84Z Fairchild Semiconductor, NDS9407_D84Z Datasheet - Page 4

• Manufacturer Part Number: NDS9407_D84Z
• Description: MOSFET Single P-Ch MOSFET Power Trench
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9407_D84Z

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Resistance Drain-source Rds (on): 0.15 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 10 ns

Typical Characteristics
0.01
100
10
0.1
10
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
1
0.001
0.1
0
Figure 7. Gate Charge Characteristics.
0.01
0.1
R
0.0001
1
DS(ON)
SINGLE PULSE
R
I
D
V
JA
= -3A
T
GS
2
A
= 125
LIMIT
= 25
= -10V
D = 0.5
0.2
0.1
o
o
C
C/W
0.05
0.02
4
-V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
6
0.001
SINGLE PULSE
8
Figure 11. Transient Thermal Response Curve.
DC
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10s
10
V
DS
10
1s
= -20V
100ms
0.01
12
10ms
-40V
1ms
14
100 s
-30V
100
16
0.1
t
1
, TIME (sec)
1200
1000
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
C
RSS
0.01
10
C
-V
OSS
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
20
10
C
t
1
ISS
, TIME (sec)
30
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
JA
10
(t) = r(t) * R
40
100
A
= 125
t
1
= P * R
t
2
SINGLE PULSE
R
JA
T
o
C/W
A
= 125°C/W
100
50
= 25°C
NDS9407 Rev B1(W)
JA
1
f = 1 MHz
V
JA
(t)
/ t
GS
2
= 0 V
1000
1000
60