SI7403DN-T1 Vishay/Siliconix, SI7403DN-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7403DN-T1
• Description: MOSFET 20V 4.5A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7403DN-T1

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.9 A
• Resistance Drain-source Rds (on): 100 mOhms at 4.5 V
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 17 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1500 mW
• Rise Time: 17 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 52 ns

Document Number: 71431
S-03390—Rev. A, 02-Apr-01
0.30
0.24
0.18
0.12
0.06
0.00
20
10
1
5
4
3
2
1
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.3 A
V
0.25
= 10 V
GS
On-Resistance vs. Drain Current
V
4
2
SD
= 2.5 V
T
J
Q
= 150_C
– Source-to-Drain Voltage (V)
g
0.50
I
– Total Gate Charge (nC)
D
– Drain Current (A)
Gate Charge
8
4
0.75
12
V
6
GS
1.00
= 4.5 V
T
J
= 25_C
16
1.25
8
_
1.50
20
10
New Product
1400
1200
1000
0.30
0.24
0.18
0.12
0.06
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
–25
V
I
D
C
GS
rss
= 3.3 A
V
= 4.5 V
4
V
DS
T
GS
J
0
2
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
Capacitance
25
I
8
D
= 3.3 A
C
Vishay Siliconix
50
oss
4
12
75
Si7403DN
100
6
C
16
www.vishay.com
iss
125
150
20
8
3