SI7403DN-T1 Vishay/Siliconix, SI7403DN-T1 Datasheet - Page 5

• Manufacturer Part Number: SI7403DN-T1
• Description: MOSFET 20V 4.5A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7403DN-T1

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.9 A
• Resistance Drain-source Rds (on): 100 mOhms at 4.5 V
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 17 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1500 mW
• Rise Time: 17 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 52 ns

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Document Number: 91000
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Revision: 18-Jul-08
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