FDP8030L_Q Fairchild Semiconductor, FDP8030L_Q Datasheet - Page 3

• Manufacturer Part Number: FDP8030L_Q
• Description: MOSFET N-Ch PowerTrench Logic Level
• Manufacturer: Fairchild Semiconductor

Specifications of FDP8030L_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 200 ns
• Forward Transconductance Gfs (max / Min): 170 S
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 187 W
• Rise Time: 185 ns
• Typical Turn-off Delay Time: 160 ns

Typical Characteristics
100
60
50
40
30
20
10
80
60
40
20
1.6
1.4
1.2
0.8
0.6
0
0
Figure 3. On-Resistance Variation with
1
1
0
-50
Figure 1. On-Region Characteristics.



Figure 5. Transfer Characteristics.
3.5V


V
4.5V
V
DS
I = 80A
D
GS
= 10V
-25
= 10V
V
V
0.5
GS
DS
T , JUNCTION TEMPERATURE (°C)
0
3.0V
J
, GATE TO SOURCE VOLTAGE (V)
T = -55°C
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
A
2
25
25°C
1
50
2.5V
125°C
75
3
1.5
100
125
4
150
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.001
0.01
0.01
2.5
1.5
0.5
0.1
60
10
0
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
3
2
1
1
0
2
0
V
GS
Drain Current and Gate Voltage.
= 2.5V
0.2
Gate-to-Source Voltage.
20
3
V
SD
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
, GATE TO SOURCE VOLTAGE (V)
0.4
3.0V
T = 125°C
A
40
I , DRAIN CURRENT (A)
4
D
3.5V
25°C
0.6
60
4.5V
5
-55°C
0.8
T
6.0V
A
T
= 125
80
A
6
= 25
o
10V
1
C
o
C
FDP8030L Rev C(W)
100
V
GS
7
1.2
I
D
= 0V
= 40A
120
1.4
8