FDP8030L_Q Fairchild Semiconductor, FDP8030L_Q Datasheet - Page 4

• Manufacturer Part Number: FDP8030L_Q
• Description: MOSFET N-Ch PowerTrench Logic Level
• Manufacturer: Fairchild Semiconductor

Specifications of FDP8030L_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 200 ns
• Forward Transconductance Gfs (max / Min): 170 S
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 187 W
• Rise Time: 185 ns
• Typical Turn-off Delay Time: 160 ns

Typical Characteristics
10
600
300
100
0.5
8
6
4
2
0
50
20
10
5
2
1
0
Figure 9. Maximum Safe Operating Area.
0.3
Figure 7. Gate Charge Characteristics.
I = 80A
D
0.005
0.05
0.03
0.02
SINGLE PULSE
R
0.5
0.3
0.2
0.1
1
JC
0.01
V
T = 25 °C
40
GS
C
= 0.8 °C/W
= 10V
1
D = 0.5
0.2
0.1
0.05
V
Single Pulse
0.02
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
80
Q , GATE CHARGE (nC)
g
0.05
3
120
Figure 11. Transient Thermal Response Curve.
0.1
5
V
DS
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
= 5V
160
10
10V
15V
200
20
0.5
30
1
240
50
t ,TIME (ms)
1
18000
10000
5000
4000
3000
2000
1000
5000
2000
1000
500
0
5
0.1
Figure 8. Capacitance Characteristics.
0.1
Figure 10. Single Pulse Maximum
V
10
GS
0.3
= 0V
V
Power Dissipation.
DS
1
0.5
SINGLE PULSE TIME (mSEC)
, DRAIN TO SOURCE VOLTAGE (V)
3
50
1
P(pk)
10
100
T - T
R
J
Duty Cycle, D = t /t
2
JC
R
t
1
C
JC
(t) = r(t) * R
30
t
= P * R
2
= 0.8 °C/W
R
SINGLE PULSE
5
JC
T = 25°C
C oss
100
C iss
C
C rss
JC
= 0.8°C/W
1
(t)
JC
500
10
FDP8030L Rev C(W)
2
300
1000
1,000
30