TP0610KL-TR1 Vishay/Siliconix, TP0610KL-TR1 Datasheet - Page 4

• Manufacturer Part Number: TP0610KL-TR1
• Description: MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V
• Manufacturer: Vishay/Siliconix

Specifications of TP0610KL-TR1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.27 A
• Resistance Drain-source Rds (on): 6 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 15.5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.8 W
• Rise Time: 15.5 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 21 ns

TP0610K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71411.
www.vishay.com
4
1000
- 0.0
- 0.1
- 0.2
- 0.3
100
0.5
0.4
0.3
0.2
0.1
10
1
0.01
0.00
- 50
0.1
Threshold Voltage Variance Over Temperature
2
1
10
V
-4
- 25
Source-Drain Diode Forward Voltage
0.05
0.02
GS
0.1
Duty Cycle = 0.5
0.2
T
J
= 0 V
= 125 °C
0.3
V
T
SD
J
0
I
D
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
= 250 µA
25
10
0.6
Single Pulse
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.9
T
75
J
T
= - 55 °C
J
= 25 °C
100
10
1.2
-2
125
Square Wave Pulse Duration (s)
1.5
150
10
-1
2.5
1.5
0.5
10
8
6
4
2
0
3
2
1
0
0.01
0
1
On-Resistance vs. Gate-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
2
V
GS
I
D
- Gate-to-Source Voltage (V)
= 200 mA
1
4
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1
0
P
DM
Time (s)
JM
- T
T
A
t
1
A
= 25 °C
S10-1476-Rev. H, 05-Jul-10
= P
6
t
2
Document Number: 71411
10
DM
I
Z
D
thJA
thJA
100
= 500 mA
t
t
1
2
(t)
= 350 °C/W
8
100
600
6
10
0
0