NDS8947_Q Fairchild Semiconductor, NDS8947_Q Datasheet - Page 4

• Manufacturer Part Number: NDS8947_Q
• Description: MOSFET Dual P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8947_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 4 A
• Resistance Drain-source Rds (on): 0.065 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 19 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 20 ns
• Typical Turn-off Delay Time: 40 ns

Typical Electrical Characteristics
-20
-15
-10
-5
0
-20
-15
-10
1.6
1.4
1.2
0.8
0.6
-1
-5
0
1
Figure 3. On-Resistance Variation with
-50
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
DS
V
GS
V
= -10V
Temperature.
I
-25
D
= -10V
GS
= -4.0A
-2
= -10V
V
GS
-1
V
0
T , JUNCTION TEMPERATURE (°C)
J
DS
, GATE TO SOURCE VOLTAGE (V)
-6.0
, DRAIN-SOURCE VOLTAGE (V)
2 5
-3
-5.0
T
-4.5
J
-2
5 0
= -55°C
-4
-4.0
7 5
-3.5
1 0 0
-3
125°C
-5
-3.0
25°C
1 2 5
1 5 0
-6
-4
1.2
1.1
0.9
0.8
0.7
0.6
1.5
0.5
Figure 4. On-Resistance Variation with Drain
2.5
1.5
0.5
1
2
1
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
-50
3
2
1
0
0
V
Current and Temperature.
GS
Temperature.
Voltage and Drain Current.
-25
= -10V
V
GS
-4
-4
= -3.5V
0
T , JUNCTION TEMPERATURE (°C)
J
I
D
I
D
2 5
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
-8
-8
- 4.0
5 0
T = 125°C
J
-12
-12
-4.5
7 5
-5.0
I
V
25°C
100
D
DS
= -250µA
-16
-16
-6.0
= V
-55°C
-10
GS
125
NDS8947.SAM
-20
150
-20