NDS8947_Q Fairchild Semiconductor, NDS8947_Q Datasheet - Page 5

• Manufacturer Part Number: NDS8947_Q
• Description: MOSFET Dual P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8947_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 4 A
• Resistance Drain-source Rds (on): 0.065 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 19 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 20 ns
• Typical Turn-off Delay Time: 40 ns

Typical Electrical Characteristics
Figure 11. Transconductance Variation with Drain
2 0 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1 2
1.1
Figure 9. Capacitance Characteristics.
9
6
3
0
Figure 7. Breakdown Voltage Variation with
1
0.1
0
-50
Current and Temperature.
V
DS
I
Temperature.
0.2
D
-25
= -10V
f = 1 MHz
V
= -250µA
GS
-4
= 0 V
-V
T
DS
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
I
D
25
, DRAIN CURRENT (A)
1
-8
50
2
T
J
= -55°C
-12
75
5
100
25°C
1 0
125°C
-16
125
C iss
C oss
C rss
150
3 0
-20
0.001
0.01
Figure 10. Gate Charge Characteristics.
1 0
0.1
8
6
4
2
0
2 0
1 0
Figure 8. Body Diode Forward Voltage Variation
5
1
0
0
I
D
= -4.0A
T = 125°C
V
J
with Current and Temperature
GS
= 0V
-V
5
0.4
SD
, BODY DIODE FORWARD VOLTAGE (V)
Q
25°C
g
1 0
, GATE CHARGE (nC)
0.8
V
-55°C
DS
= -5V
1.2
1 5
.
-10V
1.6
2 0
-20V
NDS8947.SAM
2
2 5