SI9433BDY-T1 Vishay/Siliconix, SI9433BDY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI9433BDY-T1
• Description: MOSFET 20V 6.2A 2.3W
• Manufacturer: Vishay/Siliconix

Specifications of SI9433BDY-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 55 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 55 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns

Si9433BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
-
0.6
0.4
0.2
0.0
0.2
0.4
0.01
-
0.1
50
2
1
10 -
-
0.02
4
25
0.05
0.2
0.1
Duty Cycle = 0.5
0
T
Threshold Voltage
J
25
- Temperature (°C)
10 -
Single Pulse
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
10
0.1
100
10 -
1
0.1
2
Limited by R
* V
125
Limited
I
D(on)
DS
Single Pulse
T
> minimum V
A
150
= 25 °C
V
Square Wave Pulse Duration (s)
DS
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10 -
*
1
BVDSS Limited
GS
at which R
I
DM
DS(on)
10
Limited
1
50
40
30
20
10
0.001
0
is specified
1 ms
10 ms
100 ms
1 s
10 s
DC
100
0.01
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
Time (s)
t
A
1
S09-0870-Rev. B, 18-May-09
= P
t
2
0.1
Document Number: 72755
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 80 °C/W
1
600
10