SI9433BDY-T1 Vishay/Siliconix, SI9433BDY-T1 Datasheet - Page 5

• Manufacturer Part Number: SI9433BDY-T1
• Description: MOSFET 20V 6.2A 2.3W
• Manufacturer: Vishay/Siliconix

Specifications of SI9433BDY-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 55 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 55 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 65 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72755.
Document Number: 72755
S09-0870-Rev. B, 18-May-09
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Vishay Siliconix
Si9433BDY
www.vishay.com
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