SI7445DP-T1 Vishay/Siliconix, SI7445DP-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7445DP-T1
• Description: MOSFET 20V 19A 5.4W
• Manufacturer: Vishay/Siliconix

Specifications of SI7445DP-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 12 A
• Resistance Drain-source Rds (on): 7.7 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.9 W
• Rise Time: 45 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 400 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71626
S09-0270-Rev. D, 16-Feb-09
0.020
0.016
0.012
0.008
0.004
0.000
50
10
1
5
4
3
2
1
0
0.0
0
0
V
I
V
Source-Drain Diode Forward Voltage
D
0.2
DS
GS
= 19 A
5
On-Resistance vs. Drain Current
20
V
= 15 V
= 1.8 V
SD
T
J
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
I
10
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
40
0.6
15
60
0.8
T
20
J
= 25 °C
V
V
GS
GS
80
1.0
= 2.5 V
= 4.5 V
25
1.2
100
30
15000
12000
0.030
0.024
0.018
0.012
0.006
0.000
9000
6000
3000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 19 A
V
V
= 4.5 V
4
GS
DS
T
J
2
0
- Gate-to-Source Voltage (V)
- Junction Temperature (
- Drain-to-Source Voltage (V)
Capacitance
25
8
I
D
C
= 19 A
oss
50
4
Vishay Siliconix
C
iss
12
75
Si7445DP
www.vishay.com
°
100
C)
6
16
125
150
20
8
3