2N7002\E9 Vishay Semiconductors, 2N7002\E9 Datasheet
2N7002\E9
Specifications of 2N7002\E9
Related parts for 2N7002\E9
2N7002\E9 Summary of contents
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N-Channel 60-V (D-S) MOSFET Part Number V Min (V) (BR)DSS 2N7000 2N7002 60 VQ1000J VQ1000P BS170 D Low On-Resistance: 2 Low Threshold: 2 Low Input Capacitance Fast Switching Speed Low ...
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VQ1000J/P, BS170 Vishay Siliconix Parameter Drain-Source Voltage Gate-Source Voltage—Non-Repetitive Gate-Source Voltage—Continuous T = 25_C A Continuous Drain Current Continuous Drain Current (T = 150_C 100_C Pulsed Drain Current T = 25_C A Power Dissipation ...
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Parameter d Switching Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-Resistance b Forward Transconductance b Common Source Output Conductance ...
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VQ1000J/P, BS170 Vishay Siliconix Output Characteristics 1 10 0.8 0.6 0.4 0.2 0 – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current ...
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Source-Drain Diode Forward Voltage 1.000 T = 125_C J 0.100 T 0.010 0.001 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only) 1 Duty Cycle = 0.5 0.2 0.1 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...