BS170ZL1 ON Semiconductor, BS170ZL1 Datasheet - Page 2

• Manufacturer Part Number: BS170ZL1
• Description: MOSFET 60V 500mA N-Channel
• Manufacturer: ON Semiconductor

Specifications of BS170ZL1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 500 mA
• Resistance Drain-source Rds (on): 5 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Forward Transconductance Gfs (max / Min): 0.2 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.35 W
• Factory Pack Quantity: 2000

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
BS170G
BS170RLRAG
Specifications Brochure, BRD8011/D.
Gate Reverse Current
Drain−Source Breakdown Voltage
Gate Threshold Voltage
Static Drain−Source On Resistance
Drain Cutoff Current
Forward Transconductance
Input Capacitance
Turn−On Time
Turn−Off Time
(V
(V
(V
(V
(V
(V
(V
(I
(I
D
D
GS
GS
DS
GS
DS
DS
DS
= 0.2 Adc) See Figure 1
= 0.2 Adc) See Figure 1
= 15 Vdc, V
= 0, I
= V
= 10 Vdc, I
= 25 Vdc, V
= 10 Vdc, I
= 10 Vdc, V
GS
D
, I
= 100 mAdc)
D
= 1.0 mAdc)
D
D
Device
GS
GS
DS
= 200 mAdc)
= 250 mAdc)
= 0)
= 0 Vdc)
= 0, f = 1.0 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
TO−92 (TO−226)
TO−92 (TO−226)
Package
(Pb−Free)
(Pb−Free)
2
V
Symbol
V
r
(BR)DSS
I
DS(on)
I
GS(Th)
D(off)
C
GSS
g
t
t
on
off
iss
fs
Min
0.8
60
−
−
−
−
−
−
−
2000 Tape & Reel
1000 Unit/Tube
Shipping
0.01
Typ
200
2.0
1.8
4.0
4.0
90
−
−
†
Max
3.0
5.0
0.5
10
60
10
10
−
−
mmhos
nAdc
Unit
Vdc
Vdc
mA
pF
ns
ns
W