BS170ZL1 ON Semiconductor, BS170ZL1 Datasheet - Page 3

• Manufacturer Part Number: BS170ZL1
• Description: MOSFET 60V 500mA N-Channel
• Manufacturer: ON Semiconductor

Specifications of BS170ZL1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 500 mA
• Resistance Drain-source Rds (on): 5 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Forward Transconductance Gfs (max / Min): 0.2 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.35 W
• Factory Pack Quantity: 2000

PULSE GENERATOR
2.0
1.6
1.2
0.8
0.4
0.8
2.0
1.6
1.2
0.4
0
50 W
50
0
Figure 3. V
Figure 1. Switching Test Circuit
V
Figure 5. Output Characteristics
DS
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
GS(th)
10
V
T
0
in
J
50 W
, JUNCTION TEMPERATURE (°C)
Normalized versus Temperature
40 pF
20
50
1.0 MW
V
I
+25 V
D
DS
= 1.0 mA
125 W
30
= V
100
(V
GS
50 W ATTENUATOR
in
V
RESISTIVE SWITCHING
GS
Amplitude 10 Volts)
= 10 V
http://onsemi.com
9.0 V
8.0 V
7.0 V
5.0 V
6.0 V
4.0 V
20 dB
40
150
3
100
80
TO SAMPLING SCOPE
50 W INPUT
60
40
20
2.0
1.6
1.2
0.8
0.4
0
0
V
out
10
Figure 4. On−Region Characteristics
V
OUTPUT
INVERTED
DS
V
INPUT
Figure 6. Capacitance versus
DS
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
, DRAIN - TO-SOURCE VOLTAGE (VOLTS)
Drain−To−Source Voltage
Figure 2. Switching Waveforms
1.0
20
V
GS
V
V
= 0 V
in
out
10%
30
2.0
t
on
40
90%
PULSE
WIDTH
50
3.0
V
60
GS
C
t
90%
C
C
off
oss
rss
= 10 V
iss
50%
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
10%
4.0