IS62LV256-70UI-TR ISSI, Integrated Silicon Solution Inc, IS62LV256-70UI-TR Datasheet - Page 3
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IS62LV256-70UI-TR
Manufacturer Part Number
IS62LV256-70UI-TR
Description
IC SRAM 256KBIT 70NS 28SOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS62LV256-70UI.pdf
(9 pages)
Specifications of IS62LV256-70UI-TR
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
IS62LV256
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
OPERATING RANGE
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. K
12/11/02
Symbol
V
T
T
P
I
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Range
Commercial
Industrial
Symbol Parameter
V
V
V
V
I
I
OUT
LI
LO
TERM
BIAS
STG
T
IL
OH
OL
IH
IL
= –3.0V for pulse width less than 10 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Ambient Temperature
–40°C to +85°C
0°C to +70°C
(1)
Test Conditions
V
V
GND
GND
CC
CC
(1)
= Min., I
= Min., I
V
V
IN
OUT
(Over Operating Range)
3.3V ± 5%
3.3V ± 5%
OH
OL
V
CC
V
V
= 2.1 mA
= –1.0 mA
1-800-379-4774
CC
CC
, Outputs Disabled
–0.5 to +4.6
–55 to +125
–65 to +150
Value
0.5
20
Unit
mA
°C
°C
W
V
Com.
Com.
Ind.
Ind.
Min.
–0.3
2.4
2.2
–2
–5
–2
–5
—
V
CC
Max.
0.4
0.8
ISSI
—
2
5
2
5
+ 0.3
Unit
µA
µA
V
V
V
V
®
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