IS61C6416AL-12TLI-TR ISSI, Integrated Silicon Solution Inc, IS61C6416AL-12TLI-TR Datasheet - Page 12

• Manufacturer Part Number: IS61C6416AL-12TLI-TR
• Description: IC SRAM 1MBIT 12NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61C6416AL-12TLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Density: 1Mb
• Access Time (max): 12ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 16b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 45mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 64K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

DATA RETENTION WAVEFORM (CE
IS61C6416AL
IS62C6416AL
DATA RETENTION SWITCHING CHARACTERISTICS
Note:
12
Symbol
1. Typical Values are measured at V
V
I
t
t
DR
SDR
RDR
DR
4.5V
2.2V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
DD
VDD
V
CE
for Data Retention
DR
IS64C6416AL
IS65C6416AL
DD
= 5V, T
A
t
= 25
SDR
Test Condition
See Data Retention Waveform
V
V
See Data Retention Waveform
See Data Retention Waveform
o
IN
DD
C and not 100% tested.
= 2.0V, CE V
V
CE
CE
CE
CE Controlled)
DD
– 0.2V, or V
Integrated Silicon Solution, Inc. — www.issi.com —
DD
– 0.2V
IN
Data Retention Mode
CE
V
SS
VDD - 0.2V
+ 0.2V
typ.
Com.
Auto.
Ind.
(1)
t
RDR
Min.
2.0
t
—
—
—
RC
0
50
ISSI
1-800-379-4774
Max.
100
125
5.5
90
—
—
06/08/05
Unit
µA
ns
ns
Rev. B
V
®