SI3853DV-T1 Vishay/Siliconix, SI3853DV-T1 Datasheet
SI3853DV-T1
Specifications of SI3853DV-T1
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SI3853DV-T1 Summary of contents
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... 2.85 mm Ordering Information: Si3853DV-T1-E3 (Lead (Pb)-free) Si3853DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) ...
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... Si3853DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ Junction-to-Ambient Steady State Junction-to-Foot Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 70979 S09-2276-Rev. B, 02-Nov- °C, unless otherwise noted 2.4 3.0 Si3853DV Vishay Siliconix ° ° 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 450 360 C iss ...
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... Si3853DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 150 ° 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C, unless otherwise noted ° ...
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... Normalized Thermal Transient Impedance, Junction-to-Foot = 25 °C, unless otherwise noted A 100 125 150 150 120 Reverse Voltage (V) KA Capacitance Si3853DV Vishay Siliconix - 150 ° °C J 0.1 0 0.2 0.4 0 Forward Voltage Drop (V) F Forward Voltage Drop ...
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... Si3853DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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TSOP: 5/6−LEAD JEDEC Part Number: MO-193C 5-LEAD TSOP D 0.08 C Dim ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec- 0.15 M ...
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... Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages ...
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AN823 Vishay Siliconix 140 − 170_C 3_C/s (max) FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, junction-to-foot thermal resistance, Rq measured for the device mounted ...
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Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 Return to Index Return to Index www.vishay.com 26 0.099 (2.510) 0.039 0.020 0.019 (1.001) (0.508) (0.493) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72610 Revision: 21-Jan-08 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...